FGA15N120ANTDTU igbt equivalent, igbt.
* NPT Trench Technology, Positive temperature coefficient
* Low Saturation Voltage: VCE(sat), typ = 1.9 V @ IC = 15 A and TC = 25C
* Low Switching Loss: Eoff.
Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resona.
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